Cart (Loading....) | Create Account
Close category search window

Generic degradation mechanism for 980 nm InxGa1-xAs/GaAs strained quantum-well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chu, S.N.G. ; Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 ; Chand, N. ; Joyce, W.B. ; Parayanthal, P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have observed In out diffusion from strained InxGa1-xAs quantum wells into the adjacent GaAs barriers in degraded 980-nm-wavelength strained quantum-well lasers. A previous calculation on misfit stress-induced compositional instability indicates that this material system is stable with respect to misfit strain. Therefore, the out diffusion of In from an InxGa1-xAs quantum well is mainly driven by the compositional discontinuity across the well/barrier heterointerfaces, and is believed to be activated by the nonradiative recombination of injected carriers. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 21 )

Date of Publication:

May 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.