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Generic degradation mechanism for 980 nm InxGa1-xAs/GaAs strained quantum-well lasers

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5 Author(s)
Chu, S.N.G. ; Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 ; Chand, N. ; Joyce, W.B. ; Parayanthal, P.
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We have observed In out diffusion from strained InxGa1-xAs quantum wells into the adjacent GaAs barriers in degraded 980-nm-wavelength strained quantum-well lasers. A previous calculation on misfit stress-induced compositional instability indicates that this material system is stable with respect to misfit strain. Therefore, the out diffusion of In from an InxGa1-xAs quantum well is mainly driven by the compositional discontinuity across the well/barrier heterointerfaces, and is believed to be activated by the nonradiative recombination of injected carriers. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 21 )

Date of Publication:

May 2001

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