By Topic

Dual-probe scanning tunneling microscope: Measuring a carbon nanotube ring transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Watanabe, Hiroyuki ; Advanced Research Laboratory, Corporate Research Center, Fuji Xerox Company, Ltd., 1600, Takematsu, Minamiashigara-shi, Kanagawa-ken, 250-0111, Japan ; Manabe, Chikara ; Shigematsu, Taishi ; Shimizu, Masaaki

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have constructed a dual-probe scanning tunneling microscope (D-STM). We used multiwall carbon nanotubes [(NT), diameter: ∼10 nm] as STM probes. The D-STM allows us to elucidate the electric property of a sample with a spatial resolution of ∼1 nm. Using this system, we have measured the current–voltage curves of a single NT ring as a transistor. The curves show the possibility of nanometer-scale electronic circuits composed of NT devices. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 19 )