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CaBi2Ta2O9 ferroelectric thin films prepared by pulsed laser deposition

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4 Author(s)
Das, Rasmi R. ; Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 ; Rodriguez, R.J. ; Katiyar, Ram S. ; Krupanidhi, S.B.

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Thin films of CaBi2Ta2O9 (CBT) were deposited on Pt/TiO2/SiO2/Si substrates using the pulsed laser deposition technique at temperatures ranging from 500 to 700 °C. The presence of (115) and (0010) orientations confirm the phase formation at the lower temperature (500 °C). Microstructure evolution of CBT films with oxygen pressure of 100–200 mTorr at a substrate temperature of 650 °C shows that the films deposited at lower pressure have a relatively smaller grain size and less surface roughness. The films grown at 650 °C exhibited a maximum polarization of (2Pm) 17 μC/cm2, remanent polarization of (2Pr) 8 μC/cm2 and coercive field of (Ec) 128 kV/cm, with fatigue endurance up to 1010 switching cycles. The higher dielectric constant (∼115 at 100 kHz) with a relatively lower dissipation factor (0.02) at higher growth temperature (700 °C) was explained by the increased grain size. The higher leakage current density (∼10-7 A/cm2) at higher deposition temperature is attributed to the interfacial diffusion of the film and the substrate. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 19 )

Date of Publication:

May 2001

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