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Self-organized (553)BIn0.15Ga0.85As/GaAs quantum-wire field-effect transistors

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8 Author(s)
Yan, Fa-Wang ; Hebei Semiconductor Research Institute, Shijiazhuang, 050051, People’s Republic of ChinaNational Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130023, People’s Republic of China ; Li, Xian-Jie ; Zhang, Wen-Jun ; Zhang, Rong-Gui
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Extremely uniform and high-density In0.15Ga0.85As/GaAs quantum wires (QWRs) were naturally formed on a (553)B-oriented GaAs substrate by molecular-beam epitaxy. The density of the QWRs is as high as 4.0×105cm-1. The strong photoluminescence peak at λ=868 nm from the (553)B QWRs shows a large polarization anisotropy [p=(I||-I)/(I||+I)=0.22] and a very small full width at half maximum of 9.2 meV at 12 K. Based on the modulation-doped (553)B QWR structure, self-organized QWR field-effect transistors were fabricated (the channel along the QWRs’ direction). The devices demonstrate very good saturation characteristics and pinch-off behavior at room temperature. A maximum transconductance (gm) of 135 mS/mm is measured for 2 μm gate-length devices. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 18 )

Date of Publication:

Apr 2001

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