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Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

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7 Author(s)
Adivarahan, V. ; Department of Electrical and Computer Engineering, University of South Carolina, Columbia, South Carolina 29028 ; Lunev, A. ; Khan, M.Asif ; Yang, J.
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We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to p GaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10-6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag, Au, and p GaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffraction analysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:78 ,  Issue: 18 )