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Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer

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4 Author(s)
Mitan, M.M. ; Department of Chemical and Materials Engineering, Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-6006 ; Pivin, D.P. ; Alford, T.L. ; Mayer, J.W.

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CoSi2 structures were formed by focused ion-beam implantation. Patterned silicide lines with dimensions down to 150 nm were produced on (100) silicon. The process involved the ion implantation of 200 keV As++ through a cobalt (34 nm)/oxide (∼2 nm) thin film structure. The thin oxide at the Si/Co interface acted as a selective reaction barrier. Ion-beam mixing disrupted the oxide layer to allow silicidation to proceed during subsequent rapid thermal anneal treatments. Reactions were inhibited in nonimplanted areas. A threshold dose of 3×1015cm-2 was required for process initiation. Electrical measurements resulted in resistivities ranging from 15 to 30 μΩ cm. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:78 ,  Issue: 18 )