Cart (Loading....) | Create Account
Close category search window
 

Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kolobov, Alexander V. ; Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (NAIR), 1-1-4 Higashi, Tsukuba, Ibaraki 305-8562, Japan ; Shklyaev, A.A. ; Oyanagi, Hiroyuki ; Fons, Paul
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1367287 

We have investigated the local structure and photoluminescence properties of ultrasmall Ge islands grown on Si(111) covered with SiO2. Scanning electron microscopy and transmission electron microscopy measurements show that the islands have a hemispherical shape, and depending on the growth temperature, can be either epitaxial or nonepitaxial. X-ray absorption near-edge structure measurements demonstrate that the nonepitaxial islands have the local structure of bulk diamond Ge and are very stable towards oxidation. The epitaxial islands are found to be partly oxidized, but no alloying with the Si substrate is observed. The nonepitaxial islands exhibit a photoluminescence peaked at 2.3 eV, which is typical of Ge nanocrystals embedded in SiO2. Possible mechanisms for the stability of the nonepitaxial Ge islands towards oxidation are discussed. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 17 )

Date of Publication:

Apr 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.