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Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy

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An experimental approach to investigate anomalous electrical conduction in a 100 nm width silicon wire by scanning Maxwell-stress microscopy (SMM) has been reported. The silicon wire exhibited negative resistance and hysteresis characteristics by sweeping the applied voltage up to 50 V. Potential profile along the wire obtained from the SMM images exhibited that lateral electric field significantly increased at the ground-side end of the wire after the hysteresis characteristics emerged. The field increase is interpreted as the conductivity decrease. The origin of the conductance decrease is considered to be generation and trapping of hot holes at the ground-side end. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:78 ,  Issue: 17 )