By Topic

Thermal-annealing dependence of C-related atomic configuration in Si1-x-yGexCy crystals grown by ultra-high-vacuum chemical-vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kanzawa, Y. ; Advanced Technology Research Laboratories, Matsushita Electric, Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan ; Saitoh, T. ; Kubo, M.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Si1-x-yGexCy crystals were grown by ultra-high-vacuum chemical-vapor deposition and their thermal-annealing behaviors were studied by infrared (IR) absorption measurements. The present samples exhibited absorption peaks originating from local vibrational modes of substitutional C atoms with two different atomic configurations; one is a C atom with four Si neighbors (Si4 configuration) and the other is with one Ge and three Si neighbors (Si3Ge1 configuration). As the annealing temperature was increased from 700 to 950 °C, the absorption peak of the C atoms with Si3Ge1 configuration increased in intensity. This clearly demonstrated that thermal annealing leads to the formation of Ge–C bonds. Moreover, the composition dependence of the IR spectra suggested that Ge–C bonds are formed to reduce the strain energy of the Si1-x-yGexCy crystals. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 17 )