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Strain relaxation of GaN nucleation layers during rapid thermal annealing

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2 Author(s)
Yi, M.S. ; Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju, Korea ; Noh, D.Y.

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The strain relaxation of GaN nucleation layers grown on sapphire (0001) during rapid thermal annealing was studied in a synchrotron x-ray scattering experiment. The as-grown GaN nucleation layer is compressively strained. Upon annealing to 750 °C, the lattice strain first changes to tensile. This tensile strain is released progressively as the annealing temperature increases. The nucleation layer sublimates significantly at 1050 °C where it becomes mostly strain-free hexagonal GaN. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 17 )

Date of Publication:

Apr 2001

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