Cart (Loading....) | Create Account
Close category search window
 

Photoluminescence of Ge quantum dots prepared on porous silicon by ultrahigh vacuum chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Huang, Jingyun ; State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China ; Ye, Zhizhen ; Zhao, Binghui ; Ma, Xiangyang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1359144 

This letter reports a way of preparing Ge quantum dots on anodized porous silicon layers by ultrahigh vacuum chemical vapor deposition at a low temperature of 720 °C. The porous silicon was formed by anodic conversion of p-type (100) oriented crystalline silicon in hydrofluoric acid diluted by alcohol. A clear phonon-resolved photoluminescence (PL), as a no-phonon (NP) and its transverse acoustic phonon replica, was observed from the Ge dots at the temperature of 10 K. The blueshift energy is as high as about 136 meV, but the full width at half maximum of the NP PL spectrum is only 1.23 meV. We attributed the very large blueshift in energy of the PL peak to quantum size confinement effect of the Ge quantum dots. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 13 )

Date of Publication:

Mar 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.