Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1332104
An accelerated oxidation process has been demonstrated in InAs/AlAs-based strain-compensated ultrashort-period superlattices grown on an InP substrate. It has been observed that the uniformity as well as the rate of the oxidation process in the strain-compensated short-period superlattice depends on the composition of the surrounding semiconductor layers. A suitable layer structure has been designed to obtain accelerated and reproducible oxidation rate in InP based optoelectronic devices. © 2001 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:78
,
Issue:
1
)
Date of Publication: Jan 2001
- Page(s):
- 64 - 66
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1332104
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jan 2001
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
