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An accelerated oxidation process has been demonstrated in InAs/AlAs-based strain-compensated ultrashort-period superlattices grown on an InP substrate. It has been observed that the uniformity as well as the rate of the oxidation process in the strain-compensated short-period superlattice depends on the composition of the surrounding semiconductor layers. A suitable layer structure has been designed to obtain accelerated and reproducible oxidation rate in InP based optoelectronic devices. © 2001 American Institute of Physics.