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Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

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4 Author(s)
Liu, J.P. ; IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany ; Zaumseil, P. ; Bugiel, E. ; Osten, H.J.

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We demonstrate the epitaxial growth of hexagonal Pr2O3(001) on Si(111), with x-ray ω-scan full width at half maximum values as low as 0.06°, which is comparable with Si substrates. We find that a phase transition takes place during the anneal of the as-grown films in N2 below the growth temperature. The annealed films display a cubic structure isomorphic to manganese oxide, (111) oriented but 180° rotated about the Si(111) surface normal. The phase transition can be due to nitrogen incorporation. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 5 )