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Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition

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3 Author(s)
Kawazoe, T. ; Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, 687-1 Tsuruma, Machida, Tokyo 194-0004, Japan ; Yamamoto, Y. ; Ohtsu, Motoichi

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We demonstrate a technique for the deposition of nanometric Zn dots by photodissociation of gas-phase diethylzinc using an optical near field under nonresonant conditions. The observed deposited Zn dot was less than 50 nm in size. The photodissociation mechanisms are based on the unique properties of optical near fields, i.e., enhanced two-photon absorption, induced near-field transition, and a direct excitation of the vibration-dissociation mode of diethylzinc. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 8 )

Date of Publication:

Aug 2001

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