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1.3- \mu m AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct Modulation

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9 Author(s)
Otsubo, Koji ; Nanotechnol. Res. Center, Fujitsu Labs. Ltd., Atsugi ; Matsuda, M. ; Takada, K. ; Okumura, S.
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This paper describes 1.3-mum AlGaInAs multiple-quantum-well semi-insulating buried-heterostructure distributed-feedback lasers for high-speed direct modulation. Combination of large differential gain AlGaInAs quantum wells and semi-insulating buried-heterostructure for reduction of active region achieved 25 and 40 Gb/s direct modulation with the device having the cavity length of 150 mum. The device whose Bragg wavelength is longer than gain peak wavelength showed 25 Gb/s direct modulation characteristics with superior temperature characteristics. The relaxation oscillation frequency of this device was 15 GHz and higher up to 70degC. Clear eye-opening was observed and single-mode fiber transmission experiments showed low power penalty up to 70degC. With the device of negative detuning with larger differential gain, we achieved 40 Gb/s direct modulation. This device showed high relaxation oscillation frequency and slope of 20.5 GHz and 3.2 GHz/mA1/2, respectively. The 40 Gb/s eye opened clearly at 25degC and eye-opening was observed up to 50degC.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 3 )