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Area-Efficient ESD-Transient Detection Circuit With Smaller Capacitance for On-Chip Power-Rail ESD Protection in CMOS ICs

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2 Author(s)
Shih-Hung Chen ; Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu ; Ming-Dou Ker

The RC-based power-rail electrostatic-discharge (ESD) clamp circuit with big field-effect transistor (BigFET) layout style in the main ESD clamp n-channel metal-oxide-semiconductor (NMOS) transistor was widely used to enhance the ESD robustness of a CMOS IC fabricated in advanced CMOS processes. To further reduce the occupied layout area of the RC in the power-rail ESD clamp circuit, a new ESD-transient detection circuit realized with smaller capacitance has been proposed and verified in a 0.13-mum CMOS process. From the experimental results, the power-rail ESD clamp circuit with the new proposed ESD-transient detection circuit can achieve a long-enough turn-on duration and higher ESD robustness under ESD stress condition, as well as better immunity against mis-trigger and latch-on event under the fast-power-on condition.

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:56 ,  Issue: 5 )