Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Correlation of Scattering Loss, Sidewall Roughness and Waveguide Width in Silicon-on-Insulator (SOI) Ridge Waveguides

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Kuan Pei Yap ; Nat. Res. Council of Canada, Ottawa, ON, Canada ; Delage, A. ; Lapointe, J. ; Lamontagne, B.
more authors

We use star couplers to measure the relative scattering losses of silicon-on-insulator (SOI) ridge waveguides of various widths over the range of 1.75 to 0.2 mum in a single measurement. The scattering loss data obtained for waveguides fabricated by different photolithography and e-beam base processes correlate well with the measured root-mean-square roughness of the waveguide sidewalls obtained using SEM image analysis, and are in qualitative agreement with the prediction of simple scattering loss theory.

Published in:

Lightwave Technology, Journal of  (Volume:27 ,  Issue: 18 )