This letter reports on an improved forward voltage drop (VF) and reverse leakage current (IR) in Schottky barrier rectifier using vanadium (V–SBR) as the barrier metal with a low barrier height (ΦB) and argon implantation. The VF for a V–SBR was as low as 0.25 V compared to 0.39 V for a molybdenum (Mo)–SBR at the same forward current density (JF) of 60 A/cm2. This study was able to achieve a good result for JF in SBR. Presently, the conventional Schottky rectifier with a low ΦB metal is used to achieve low VF, but at the expense of a high IR. To reduce this effect, crystalline Si was altered into amorphous Si using argon implantation on the n-epitaxial layer. Finally, a SBR with a high JF and low IR could be fabricated. © 2001 American Institute of Physics.