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Schottky barrier rectifier with high current density using vanadium as barrier metal

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4 Author(s)
Kim, J.S. ; KEC, 149, Kongdan-dong, Kumi-city, Korea ; Choi, H.H. ; Son, S.H. ; Choi, S.Y.

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This letter reports on an improved forward voltage drop (VF) and reverse leakage current (IR) in Schottky barrier rectifier using vanadium (V–SBR) as the barrier metal with a low barrier height B) and argon implantation. The VF for a V–SBR was as low as 0.25 V compared to 0.39 V for a molybdenum (Mo)–SBR at the same forward current density (JF) of 60 A/cm2. This study was able to achieve a good result for JF in SBR. Presently, the conventional Schottky rectifier with a low ΦB metal is used to achieve low VF, but at the expense of a high IR. To reduce this effect, crystalline Si was altered into amorphous Si using argon implantation on the n-epitaxial layer. Finally, a SBR with a high JF and low IR could be fabricated. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 6 )

Date of Publication:

Aug 2001

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