By Topic

Studies of thin film growth and oxidation processes for conductive Ti–Al diffusion barrier layers via in situ surface sensitive analytical techniques

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Dhote, A.M. ; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 ; Auciello, O. ; Gruen, D.M. ; Ramesh, R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Conducting diffusion barrier layers play a critical role in high-density memory integration. We recently demonstrated that Ti–Al can be used as a diffusion barrier layer for the integration of ferroelectric capacitors with complementary metal–oxide semiconductor devices for the fabrication of nonvolatile ferroelectric random access memories (NVFRAMs). Here, we discuss results from systematic studies designed to understand Ti–Al film growth and oxidation processes using in situ ion beam sputter deposition in conjunction with complementary in situ atomic layer-resolution mass spectroscopy of recoil ion (MSRI) and surface sensitive x-ray photoelectron spectroscopy (XPS). The concurrent MSRI/XPS analysis revealed that amorphous Ti–Al layers produced by tailored sputter-deposition methods are resistant to oxidation to at least 600 °C, and that oxidation occurs only when the a-Ti–Al layers are exposed to oxygen at ≫600 °C, via the segregation of Ti species to the surface and TiO2 formation. The a-Ti–Al layers discussed in this letter could be used in the double functionality of a bottom electrode/diffusion barrier for the integration of ferroelectric capacitors with Si substrates for the fabrication of NVFRAMs and other devices. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 6 )