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Spatial variation of electrical properties in lateral epitaxially overgrown GaN

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8 Author(s)
Hsu, J.W.P. ; Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 ; Matthews, M.J. ; Abusch-Magder, D. ; Kleiman, R.N.
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Using confocal Raman and scanning probe microscopies, we show that the electrical properties of lateral epitaxial overgrown GaN films vary at the submicron scale. Wing regions, which are located directly above the SiOx stripes, contain carrier densities ∼1020 cm-3, but possess a Fermi level deep in the band gap. This cannot be explained by having a high density of free electrons in the conduction band, but is consistent with high levels of compensation and impurity band transport. In the coalescence region, stripes of different electrical properties are evident, indicating the incorporation of impurities and defects being dictated by the growth dynamics. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 6 )

Date of Publication:

Aug 2001

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