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Effect of hydrogenation on Al-related photoluminescence in 6H–SiC

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2 Author(s)
Koshka, Y. ; Department of Electrical and Computer Engineering, Mississippi State University, Box 9571, Mississippi State, Mississippi 39762 ; Mazzola, Michael S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1391403 

Interaction of hydrogen with Al acceptors in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Hydrogenation is performed in hydrogen plasma using a standard inductively coupled plasma etching system. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in relative intensity of Al bound exciton (Al–BE) PL. A gradual quenching of the remaining Al–BE photoluminescence is observed in hydrogenated samples under excitation with above band gap light, resulting in a complete disappearance of Al–BE PL emission. High-temperature annealing completely restores the shape of the PL spectrum to its prehydrogenation form. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 6 )

Date of Publication:

Aug 2001

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