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Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth

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4 Author(s)
Murata, Takeshi ; Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan ; Nakazawa, H. ; Tsukidate, Yoshikazu ; Suemitsu, M.

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The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (≪600 °C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu etal, Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 6 )

Date of Publication:

Aug 2001

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