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Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots

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7 Author(s)
Ghosh, S. ; Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 ; Bhattacharya, P. ; Stoner, E. ; Singh, J.
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We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a study of temperature-dependent large signal modulation experiments made on self-organized In0.4Ga0.6As/GaAs quantum dot lasers. The Auger coefficient decreases from ∼8×10-29cm6/s at 100 K to ∼4×10-29cm6/s at 300 K. This behavior, which is different from results in other higher-dimensional systems, is explained in terms of the temperature dependence of electron-hole scattering in the dots and contribution from higher lying states in the dot and adjoining layers. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 6 )

Date of Publication:

Aug 2001

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