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Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi3Ti3O12-δ thin films

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4 Author(s)
Kato, Kazumi ; National Institute of Advanced Industrial Science and Technology, 1 Hirate-cho, Kita-ku, Nagoya 462-8510, Japan ; Suzuki, Kazuyuki ; Nishizawa, Kaori ; Miki, Takeshi

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Thin films of a bismuth-based layer-structured perovskite compound with a number of oxygen octahedron along the c axis between Bi–O layers of three, CaBi3Ti3O12-δ, were prepared using a mixture solution of complex alkoxides. The films crystallized below 550 °C. The crystal structure and surface morphology of these films changed between 600 and 650 °C. The 650 °C-annealed thin film consisted of well-developed grains and exhibited polarization–electric hysteresis loops. The remanent polarization and coercive electric field were 8.5 μC/cm2 and 124 kV/cm, respectively, at 7 V. The dielectric constant and loss factor were about 250 and 0.048, respectively, at 100 kHz. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 3 )