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Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

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8 Author(s)
Sugaya, T. ; National Institute of Advanced Industrial Science and Technology (AIST), and CREST, Japan Science and Technology (JST), 1-1-4, Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Ogura, Mutsuo ; Sugiyama, Y. ; Shimizu, T.
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Ridge-type InGaAs/InAlAs quantum-wire field-effect transistors are realized by selective molecular-beam epitaxy and their transport characteristics are studied. An analysis of the depopulation of one-dimensional subbands in these structures reveals little evidence for sidewall depletion, and yields an estimate for the carrier density in good agreement with that found in two-dimensional InGaAs/InAlAs heterojunctions. Subband splittings as large as 7.4 meV are obtained in the wires, indicating their excellent one-dimensional transport properties. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 3 )

Date of Publication:

Jul 2001

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