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Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition

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4 Author(s)
Stoldt, C.R. ; Department of Chemical Engineering, 201 Gilman Hall, University of California, Berkeley, Berkeley, California 94720-1462 ; Fritz, M.C. ; Carraro, C. ; Maboudian, R.

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1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for silicon-carbide films deposited using conventional dual-source chemical-vapor deposition. Additionally, we comment on the feasibility of integrating this process into the fabrication technology for microelectromechanical systems. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:79 ,  Issue: 3 )