By Topic

Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Stoldt, C.R. ; Department of Chemical Engineering, 201 Gilman Hall, University of California, Berkeley, Berkeley, California 94720-1462 ; Fritz, M.C. ; Carraro, C. ; Maboudian, R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for silicon-carbide films deposited using conventional dual-source chemical-vapor deposition. Additionally, we comment on the feasibility of integrating this process into the fabrication technology for microelectromechanical systems. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 3 )