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Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties

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7 Author(s)
Kawaguchi, K. ; Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8904, Japan ; Shiraki, Y. ; Usami, N. ; Zhang, J.
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Strain-balanced Si/SiGe multiple quantum wells (MQWs), which are designed to overcome the limitation of the number of wells coming from the strain accumulation, were fabricated, and their optical properties were investigated. X-ray diffraction spectra and cross-sectional transmission-electron-microscope images showed a high-crystalline quality of samples and excellent uniformity of the well width. Well-resolved no-phonon and TO-phonon-assisted transitions from strain-balanced MQWs were observed by low-temperature photoluminescence spectroscopy, and both their temperature and excitation power dependence showed blueshifts due to the delocalization of excitons, the band bending, and/or the band-filling effect. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 3 )

Date of Publication:

Jul 2001

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