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Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates

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10 Author(s)
Salem, B. ; Laboratoire de Physique de la Matière-LPM, UMR CNRS 5511, INSA de Lyon, Bâtiment Blaise Pascal, 7 avenue Jean Capelle, F-69621 Villeurbanne cedex, France ; Olivares, J. ; Guillot, G. ; Bremond, G.
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We have investigated the effect of misorientated InP(001) substrates on the optical properties of InAs quantum islands (QIs) grown by molecular-beam epitaxy in the Stranski–Krastanow regime. Detailed temperature-dependent photoluminescence (PL), excitation density PL, and polarization of photoluminescence (PPL) are studied. PPL shows a high degree of linear polarization (near 40%) for the nominally oriented substrate n and for the substrate with 2° off miscut angle toward the [110] direction (2° F), while it is near 15% for the substrate with 2° off miscut angle towards [010] direction (2° B), indicating the growth of InAs quantum wires on nominal and 2° F substrates and of InAs quantum dots on 2° B substrate. These island shapes are confirmed by morphological investigations performed by atomic force microscopy. The integrated PL intensity remains very strong at room temperature, as much as 36% of that at 8 K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP(001). © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:79 ,  Issue: 26 )