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Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers

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6 Author(s)
Funato, Mitsuru ; Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan ; Yamamoto, Shuichiro ; Kaisei, Kiyohiro ; Shimogami, Koichiro
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Hexagonal GaN (h-GaN) layers are grown by metalorganic vapor-phase epitaxy on GaAs{11n}A and B (n=8, 4, 3, 2, 1) substrates using AlAs intermediate layers. The best quality of h-GaN is obtained on (11¯4)B, where the crystallographic relationship is found from a pole figure to be h-GaN{0001}∥GaAs(33¯5)B and h-GaN{101¯2}∥GaAs(001). We propose a simple model that explains why such a crystallographic relationship is easily realized on {114} resulting in the superior structural and optical properties. Furthermore, from a comparison between the growth on the A and B substrates, it is pointed out that the polarity is a key factor in determining the crystallographic properties. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:79 ,  Issue: 25 )