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Browse Journals & Magazines > Applied Physics Letters ...> Volume:79 Issue:24 Help

Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy

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4 Author(s)
Nashima, S. ; Research Center for Superconductor Photonics, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan ; Morikawa, O. ; Takata, K. ; Hangyo, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1413498 

Optical properties of doped silicon wafers have been measured by means of terahertz time domain reflection spectroscopy. A method is proposed to obtain the relative phase by reflection accurately. By using this method, the relative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped silicon (ρ=0.136 Ω cm) in the terahertz region agrees with the simple Drude model. © 2001 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:79 ,  Issue: 24 )

Date of Publication: Dec 2001

Page(s):
3923 - 3925
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1413498
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Dec 2001

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