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Multipeak negative-differential-resistance device by combining single-electron and metal–oxide–semiconductor transistors

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3 Author(s)
Inokawa, H. ; NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa Prefecture 243-0198, Japan ; Fujiwara, Akira ; Takahashi, Yasuo

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A multipeak negative-differential-resistance device is proposed. The device comprises a single-electron transistor (SET) and a metal–oxide–semiconductor field-effect transistor (MOSFET), and can, in principle, generate an infinite number of current peaks. Operation of the proposed device is verified at 27 K with a SET fabricated by the pattern-dependent oxidation process and a MOSFET on the same silicon-on-insulator wafer. Six current peaks and a peak-to-valley current ratio of 2.1 are obtained, and multiple-valued memory operation is successfully demonstrated. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 22 )