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Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

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8 Author(s)
Li, Wei ; Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland ; Jouhti, T. ; Chang Si Peng ; Konttinen, J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1418455 

Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 μm. For a broad-area oxide stripe, uncoated Fabry–Perot laser with a cavity length of 1600 μm, the threshold current density is 546 A/cm2 at room temperature. The internal quantum efficiency for these lasers is 80%, while the materials losses are 7.0 cm-1. A characteristic temperature of 104 K was measured in the temperature range from 20 to 80 °C. Optical output up to 40 mW per facet under continuous-wave operation was achieved for these uncoated lasers at room temperature. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 21 )

Date of Publication:

Nov 2001

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