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Formation of nonradiative defects in molecular beam epitaxial GaNxAs1-x studied by optically detected magnetic resonance

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5 Author(s)
Thinh, N.Q. ; Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden ; Buyanova, I.A. ; Chen, W.M. ; Xin, H.P.
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The formation of two nonradiative defects (i.e., an AsGa-related complex and an unknown deep-level defect with g=2.03) in GaNxAs1-x epilayers and GaAs/GaNxAs1-x multiple-quantum-well structures, grown by molecular beam epitaxy, is studied by the optically detected magnetic resonance technique. It is shown that contributions by these defects in competing carrier recombination strongly vary with the nitrogen composition. An increase in the growth temperature or postgrowth rapid thermal annealing significantly reduces the influence of the nonradiative defects studied, and is accompanied by a remarkable improvement in the optical properties of the structures. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:79 ,  Issue: 19 )