By Topic

Electron-beam-induced densification of Ge-doped flame hydrolysis silica for waveguide fabrication

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Garcia Blanco, S. ; Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8QQ, United Kingdom ; Glidle, A. ; Davies, J.H. ; Aitchison, J.S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Experimentally we compare the densification induced by electron beam irradiation of Ge-doped silica, produced by flame hydrolysis deposition with the densification of thermally produced SiO2. By comparing these results to the predictions made by elasticity theory, we find good agreement for the thermal SiO2 by considering a single region of electron beam damage. For the Ge-doped flame-hydrolysis-deposited silica, we need to include in the model a second, shallow region, which densifies to a greater extent. X-ray photoelectron spectroscopy measurements suggest that the thickness of this additional region is comparable to a layer that was found to be depleted of Ge. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 18 )