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Identification of surface anion antisite defects in (110) surfaces of III–V semiconductors

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8 Author(s)
Ebert, Ph. ; Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany ; Quadbeck, P. ; Urban, K. ; Henninger, B.
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We identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tunneling microscopy combined with density-functional theory calculations. In contrast to subsurface arsenic antisite defects, surface antisite defects are electrically inactive and have a very localized defect state which gives rise to a distinct feature in scanning tunneling microscopy images. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:79 ,  Issue: 18 )