Single-crystalline Sr1-xLaxCuO2 thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tconset=41.5 K and Tczero=39.0 K, which is close to the highest Tconset of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ cm just above Tc. © 2001 American Institute of Physics.