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Browse Journals & Magazines > Applied Physics Letters ...> Volume:79 Issue:16 Help

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

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3 Author(s)
Kumakura, K. ; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ; Makimoto, T. ; Kobayashi, N.

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A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1×10-6 Ω cm2. The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN. © 2001 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:79 ,  Issue: 16 )

Date of Publication: Oct 2001

Page(s):
2588 - 2590
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1410336
Date of Current Version :
18 June 2009
Issue Date :
Oct 2001

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