Cart (Loading....) | Create Account
Close category search window
 

Interface reactions of high-κ Y2O3 gate oxides with Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Busch, B.W. ; Agere Systems, Electronic Devices Research Laboratory, Murray Hill, New Jersey 07974 ; Kwo, J. ; Hong, M. ; Mannaerts, J.P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1406989 

Ultrathin Y2O3 films were electron beam evaporated in an ultrahigh vacuum onto Si(100) and investigated by high-resolution medium energy ion scattering. Selected films were capped in situ with amorphous Si. Uncapped films that were exposed to air prior to analysis contained excess oxygen compared to a stoichiometric Y2O3 film, and showed a 6–8 Å interfacial layer. Si uptake from the substrate occurred in these films after a 700 °C vacuum anneal, presumably by reacting with the excess oxygen. Si-capped Y2O3 films on the other hand were stoichiometric, and the substrate interface was sharp (≤2 Å), even after 900 °C vacuum anneals. No change was seen at the Y2O3 capping layer interface until ≥800 °C for vacuum anneals. These measurements indicate that control of the interface composition is not possible after exposure of ultrathin Y2O3 films to air. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 15 )

Date of Publication:

Oct 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.