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Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

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6 Author(s)
Koester, S.J. ; IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 ; Rim, K. ; Chu, J.O. ; Mooney, P.M.
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The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si0.8Ge0.2 where the top Si thickness was 20–30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100 °C for 30 s. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed to interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 14 )

Date of Publication:

Oct 2001

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