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Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases

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6 Author(s)
Di Gaspare, L. ; Dipartimento di Fisica and Unità INFM-Università degli Studi di Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy ; Alfaramawi, K. ; Evangelisti, F. ; Palange, E.
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The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900 cm2/Vs at room temperature and 8.2×104cm2/Vs at 4.2 K were obtained. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 13 )