By Topic

Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Di Gaspare, L. ; Dipartimento di Fisica and Unità INFM-Università degli Studi di Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy ; Alfaramawi, K. ; Evangelisti, F. ; Palange, E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900 cm2/Vs at room temperature and 8.2×104cm2/Vs at 4.2 K were obtained. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 13 )