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Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures

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4 Author(s)
Walter, G. ; Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 ; Holonyak, N. ; Ryou, J.-H. ; Dupuis, R.D.

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Data are presented demonstrating continuous 300 K photopumped InP quantum dot (QD) laser operation (656–679 nm) realized by modifying and coupling, via tunneling, an auxiliary InGaP quantum well (QW) to the QDs of an InP–In(AlGa)P–InAlP heterostructure grown by metalorganic chemical vapor deposition. The In0.49Ga0.51P QW coupled to the InP QDs by a thin (>~20 Å) In0.5Al0.3Ga0.2P barrier overcomes the limitations of carrier collection, lateral transport, and thermalization in the QDs, thus yielding a different form of QD laser. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 13 )