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Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

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3 Author(s)
Tezuka, T. ; Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan ; Sugiyama, N. ; Takagi, S.

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A promising fabrication method for a Si1-xGex-on-insulator (SGOI) virtual substrate and evaluation of strain in the Si layer on this SGOI substrate are presented. A 9-nm-thick SGOI layer with x=0.56 was formed by dry oxidation after epitaxial growth of Si0.92Ge0.08 on a silicon-on-insulator substrate. During the oxidation, Ge atoms were rejected from the surface oxide layer and condensed in the remaining SGOI layer, which was partially relaxed without introducing a significant amount of dislocations. It is found from the analysis of the Raman spectra that the strained Si layer grown on the SGOI layer involves a tensile strain of 1%. This strained Si on the SGOI structure is applicable to sub-100-nm metal–oxide–semiconductor field-effect transistors. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 12 )