By Topic

Atomic-scale surface control and second-harmonic generation in GdxY1-xCa4O(BO3)3 thin films grown by combinatorial laser molecular-beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Kim, T.-W. ; Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan ; Arai, N. ; Koinuma, H. ; Matsumoto, Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1402964 

We studied the atomic-scale growth control and second-harmonic generation (SHG) properties of GdxY1-xCa4O(BO3)3 thin films. Combinatorial laser molecular-beam epitaxy was employed to optimize the growth conditions of the film. Ultrasmooth GdxY1-xCa4O(BO3)3 thin films with step-and-terrace structure were obtained by using atomically controlled GdCa4O(BO3)3 substrates. The dependence of SHG intensity on the fundamental wave polarization angle was studied for the epitaxial film on (010) GdCa4O(BO3)3 substrate in comparison for the randomly oriented film on (0001) sapphire substrate. It was found that only the epitaxially grown film clearly exhibited a fourfold SHG intensity showing type-II phase-matching direction. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 12 )