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Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy

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4 Author(s)
Shen, X.Q. ; Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Shimizu, M. ; Okumura, H. ; Sasaki, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1402650 

Time-resolved photoluminescence measurements at 5 K were performed to study the optical properties of InGaN/GaN multiple-quantum wells (MQWs) grown by plasma-assisted molecular-beam epitaxy (rf-MBE). Stimulated-emission (SE) phenomena by optical pumping were observed under the high-excitation density from the InGaN/GaN MQW samples with the In composition varying from 0.04 to 0.16. It was found that the threshold density for SE phenomena strongly depended on the In composition, where the lowest threshold density was 69 μJ/cm2 from our samples. Our results show a potential of rf-MBE technique for the future optical device applications. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 11 )

Date of Publication:

Sep 2001

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