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Browse Journals & Magazines > Applied Physics Letters ...> Volume:79 Issue:10 Help

Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition

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2 Author(s)
Shin, Woong-Chul ; Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejon, 305-764, Korea ; Yoon, Soon-Gil

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Ferroelectric SrBi2Ta2O9 (SBT) thin films were deposited onto the Bi2O3 buffered Pt/Ti/SiO2/Si substrates using liquid-delivery metalorganic chemical-vapor deposition. The SBT films with a 5-nm-thick Bi2O3 buffer layer on a Pt bottom electrode showed (115) orientation stronger than those without the Bi2O3 buffer layer after annealing at 750 °C. The Bi2O3 buffer layer in Pt/Bi2O3/SBT/Bi2O3/Pt/Ti/SiO2/Si capacitors effectively prevents the evaporation of Bi through the Pt top electrode and diffusion of Bi into the Pt bottom electrode. The remanent polarization and leakage current densities of SBT films with Bi2O3 buffer layers were improved significantly in comparison with those for the films without the Bi2O3 buffer layer. The remanent polarization (2Pr) and coercive field (Ec) of SBT films without and with the Bi2O3 buffer layer annealed at 750 °C were 12 and 23 μC/cm2, 57 and 38 kV/cm at an applied voltage of 5 V, respectively. © 2001 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:79 ,  Issue: 10 )

Date of Publication: Sep 2001

Page(s):
1519 - 1521
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1400077
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2001

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