By Topic

Carrier relaxation dynamics for As defects in GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Gil, Bernard ; Université de Montpellier II, Groupe d’Etude des semiconducteurs, case courrier 074, 34095 Montpellier cedex 5, France ; Morel, Aurelien ; Taliercio, Thierry ; Lefebvre, P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1380400 

Long decay times in the 50–150 ns range have been measured for the characteristic blue photoluminescence that peaks at 2.6 eV in GaN:As. We interpret these long decay times according to the theoretical predictions that this blue photoluminescence is caused by the incorporation of arsenic on the gallium site. The long decay times are characteristics of the large lattice relaxation for such a deep donor with a negative-U center behavior. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:79 ,  Issue: 1 )