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Near- and mid-infrared detection using GaAs/InxGa1-xAs/InyGa1-yAs multiple step quantum wells

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5 Author(s)
Touse, M.P. ; Department of Physics, Naval Postgraduate School, Monterey, California 93943 ; Karunasiri, G. ; Lantz, K.R. ; Li, H.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1871350 

A dual-band multiple-quantum-well infrared photodetector capable of simultaneously detecting wavelengths near 0.9 μm and 10 μm has been fabricated using GaAs/InGaAs step quantum wells. The detection of the near (0.82–0.95 μm)- and mid (9–11 μm)-infrared wavelength bands was achieved using interband and intersubband transitions. The measured peak responsivities of the near- and mid-infrared bands were 0.4 A/W and 1 A/W, respectively, at 0.8 V bias across the device. The broken symmetry of the step quantum well allows transitions from the ground states of heavy and light holes to the first-excited electron state allowing the photoexcited carriers to be efficiently collected. The estimated values of the detectivities for near- and mid-infrared bands at 40 K and 0.8 V bias are approximately 4.5×109 cm(Hz)1/2/W and 1.1×1010 cm(Hz)1/2/W, respectively.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 9 )

Date of Publication:

Feb 2005

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