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Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode

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3 Author(s)
Bunker, K.L. ; Materials Science and Engineering Department and Analytical Instrumentation Facility, North Carolina State University , Box 7531, Raleigh, North Carolina 27695-7531 ; Garcia, R. ; Russell, P.E.

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Scanning electron microscopy (SEM) cathodoluminescence (CL) experiments were used to determine the existence and direction of piezoelectric fields in a commercial InGaN multiple-quantum-well (MQW) light-emitting diode (LED). The CL emission peak showed a blueshift with increasing reverse bias due to the cancellation of the piezoelectric field. A full compensation of the piezoelectric field was observed followed by a redshift with a further increase of reverse bias, indicating that flat-band conditions had been reached. We determined the piezoelectric field points in the [000-1] direction and estimated the magnitude to be approximately 1 MV/cm. SEM-CL carrier generation density variation and electroluminescence experiments were also used to confirm the existence of a piezoelectric field in the InGaN MQW LED.

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Applied Physics Letters  (Volume:86 ,  Issue: 8 )