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n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes

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4 Author(s)
Nosho, Yosuke ; Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan ; Ohno, Y. ; Kishimoto, Shigeru ; Mizutani, Takashi

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We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO2/Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 7 )