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Browse Journals & Magazines > Applied Physics Letters ...> Volume:86 Issue:7 Help

Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN/GaN quantum well structures

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6 Author(s)
Xu, S.J. ; Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong, People’s Republic of China ; Wang, Y.J. ; Li, Q. ; Zhang, X.H.
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Strongly enhanced lateral diffusion of photogenerated carriers was directly observed in the luminescent image of the InGaN/GaN quantum wells. Such an effect was quantitatively modeled using diffusion equation and the ambipolar diffusion coefficient derived by K. H. Gulden and his co-workers [Phys. Rev. Lett. 66, 373 (1991)]. Our simulation shows that the vertical piezoelectric field existing in strained InGaN/GaN quantum wells is the original “driving force” for the enhancement of lateral diffusion. Influence of the density of photogenerated carriers and their average mobility on the enhancement was discussed.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 7 )

Date of Publication: Feb 2005

Page(s):
071905 - 071905-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1862774
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2005

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